4007787550
|
 |
||||||||||||||
| 貨號 | 品名 | 規(guī)格 | 包裝 | 單價 | 貨期 | 庫存 |
| JD200601130812 | TaSe2 二硒化鉭 | 超高純 | 1g | 2000元 | 咨詢客服 | 3天 |
| JD200601130655 | TaSe2 二硒化鉭 | 高純 | 1g | 1000元 | 咨詢客服 | 3天 |
| 性狀： | 晶體種類： 金屬性, 超導材料，紅外材料。拓撲材料 純度： >99.999 % 表征方法： EDS，SEM，Raman bandgap： 0 eV 保存方法： 注意防氧化 |
| 質(zhì)量標準： | 參考文獻 1， Ryu, Hyejin, et al. "Persistent charge-density-wave order in single-layer TaSe2." Nano letters 18.2 (2018): 689-694. 2，Chowdhury, Sugata, et al. "Rearrangement of the Cation (Ta) of 2H-TaSe 2 in the Charge Density Wave Phase (CDW): A DFT Study." Bulletin of the American Physical Society 63 (2018). 3，Wu, Yueshen, et al. "Dimensional reduction and ionic gating induced enhancement of superconductivity in atomically thin crystals of 2H-TaSe2." Nanotechnology 30.3 (2018): 035702. 4，Wang, Jin, et al. "Tunable 2H–TaSe2 room-temperature terahertz photodetector." Chinese Physics B 28.4 (2019): 046802. |
