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貨號 | 品名 | 規(guī)格 | 包裝 | 單價 | 貨期 | 庫存 |
JD200601113116 | HfS2 硫化鉿 | -- | -- | 0元 | 咨詢客服 | 3天 |
性狀: | 晶體種類: Semiconductor 純度: >99.999 % 表征方法: EDS,SEM,Raman 晶體生長方式: CVT 化學(xué)氣相傳輸法 |
質(zhì)量標(biāo)準(zhǔn): | 1,Kanazawa, Toru, et al. "Few-layer HfS 2 transistors." Scientific reports 6 (2016): 22277. 2,Fu, Lei, et al. "Van der Waals Epitaxial Growth of Atomic Layered HfS2 Crystals for Ultrasensitive Near‐Infrared Phototransistors." Advanced Materials 29.32 (2017): 1700439. 3,Mirabelli, Gioele, et al. "Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2." Journal of Applied Physics 120.12 (2016): 125102. 4,Colibaba, Stefana Anais, et al. "Interlayer dielectric function of a type-II van der Waals semiconductor: The HfS 2/PtS 2 heterobilayer." Physical Review Materials 3.12 (2019): 124002. |