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| 貨號(hào) | 品名 | 規(guī)格 | 包裝 | 單價(jià) | 貨期 | 庫存 |
| JD200529110212 | TiSe2 硒化鈦 | 大于25毫克 | -- | 2720元 | 咨詢客服 | 3天 |
| JD200529110151 | TiSe2 硒化鈦 | 大于10毫克 | -- | 1900元 | 咨詢客服 | 3天 |
| 性狀： | 晶體大小： 5~10 mm 晶體種類： 半金屬，紅外材料，超導(dǎo)材料 純度： >99.999 % 表征方法： EDS，SEM，Raman bandgap： 0 eV 注意事項(xiàng)： 表面容易氧化 |
| 質(zhì)量標(biāo)準(zhǔn)： | 參考文獻(xiàn) 1,Wang, Hong, et al. "Large‐Area Atomic Layers of the Charge‐Density‐Wave Conductor TiSe2." Advanced Materials 30.8 (2018): 1704382. 2, Hellgren, Maria, et al. "Critical role of the exchange interaction for the electronic structure and charge-density-wave formation in TiSe 2." Physical review letters 119.17 (2017): 176401. 3,Singh, Bahadur, et al. "Stable charge density wave phase in a 1 T–TiSe 2 monolayer." Physical Review B 95.24 (2017): 245136. 4,Campbell, Daniel J., et al. "Intrinsic insulating ground state in transition metal dichalcogenide TiSe 2." Physical Review Materials 3.5 (2019): 053402. |
