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貨號 | 品名 | 規(guī)格 | 包裝 | 單價 | 貨期 | 庫存 |
JD200529095650 | SnBi4Te7晶體 | 大于25毫克 | -- | 5120元 | 咨詢客服 | 3天 |
JD200529095423 | SnBi4Te7晶體 | 大于10毫克 | -- | 3120元 | 咨詢客服 | 3天 |
性狀: | 材料名稱 Name
性質分類 Electrical properties 拓撲絕緣體,紅外材料 Topological Insulators 禁帶寬度 Bangap 0.632 eV 合成方法 Synthetic method CVT 剝離難易程度 Degree of difficulty for exfoliation 中 Medium |
質量標準: | 參考文獻 1,Vergniory, M. G., et al. "Bulk and surface electronic structure of SnBi4Te7 topological insulator." Applied surface science 267 (2013): 146-149. 2, Caillat, T., et al. "Synthesis and thermoelectric properties of some materials with PbBi4Te7 crystal structure." Proc. XIX Int. Conf. on Thermoelectrics. 2000. 3,Zhitinskaya, M. K., et al. "Transport phenomena in the anisotropic layered compounds MeBi 4 Te 7 (Me= Ge, Pb, Sn)." Semiconductors 46.10 (2012): 1256-1262. |