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| 貨號 | 品名 | 規(guī)格 | 包裝 | 單價 | 貨期 | 庫存 |
| JD200529092420 | PbBi6Te10晶體 | 大于25毫克 | -- | 5120元 | 咨詢客服 | 3天 |
| JD200529092343 | PbBi6Te10晶體 | 大于10毫克 | -- | 3120元 | 咨詢客服 | 3天 |
| 性狀： | 材料名稱 Name PbBi6Te10 性質(zhì)分類 Electrical properties 拓?fù)浣^緣體，紅外材料，熱電材料 Topological Insulators Bangap 0.319 eV 合成方法 Synthetic method CVT 剝離難易程度 Degree of difficulty for exfoliation
Easy |
| 質(zhì)量標(biāo)準(zhǔn)： | 參考文獻(xiàn) 1，Pacile, D., et al. "Deep insight into the electronic structure of ternary topological insulators: A comparative study of PbBi4Te7 and PbBi6Te10." physica status solidi (RRL)–Rapid Research Letters 12.12 (2018): 1800341. 2，Pacile, D., et al. "Deep insight into the electronic structure of ternary topological insulators: A comparative study of PbBi4Te7 and PbBi6Te10." physica status solidi (RRL)–Rapid Research Letters 12.12 (2018): 1800341. 3，Zemskov, V. S., et al. "Thermoelectric materials based on anion-substituted solid solutions in the Pb, Bi‖ Se, Te ternary reciprocal system." Inorganic Materials: Applied Research 4.2 (2013): 77-84 |
