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| 性狀： | 材料名稱 Name Pb2Bi2Te5 性質(zhì)分類 Electrical properties 拓?fù)浣^緣體，紅外材料，相變材料，熱電材料 Topological Insulators 禁帶寬度 Bangap 0.186 eV 合成方法 Synthetic method CVT 剝離難易程度 Degree of difficulty for exfoliation 中 Medium |
| 質(zhì)量標(biāo)準(zhǔn)： | 參考文獻(xiàn) 1，Silkin, I. V., et al. "Three-and two-dimensional topological insulators in Pb 2 Sb 2 Te 5, Pb 2 Bi 2 Te 5, and Pb 2 Bi 2 Se 5 layered compounds." JETP letters 94.3 (2011): 217. 2，Shelimova, L. E., et al. "Crystal structures and thermoelectric properties of layered compounds in the ATe–Bi 2 Te 3 (A= Ge, Sn, Pb) systems." Inorganic materials 40.5 (2004): 451-460. 3，Shelimova, L. E., et al. "Solid solutions based on laminated chalcogenides of bismuth and lead in ternary reciprocal Pb, Bi|| Se, Te system." Inorganic Materials: Applied Research 6.4 (2015): 298-304. 4，Guin, Satya N., Ananya Banik, and Kanishka Biswas. "Thermoelectric energy conversion in layered metal Chalcogenides." 2d Inorganic Materials Beyond Graphene (2017): 239. |
