4007787550
|
 |
||||||||||||||
| 貨號(hào) | 品名 | 規(guī)格 | 包裝 | 單價(jià) | 貨期 | 庫存 |
| JD200529091532 | Pb2Bi2Se5晶體 | 大于25毫克 | -- | 5120元 | 咨詢客服 | 3天 |
| JD200529091505 | Pb2Bi2Se5晶體 | 大于10毫克 | -- | 3120元 | 咨詢客服 | 3天 |
| 性狀： | 材料名稱 Name Pb2Bi2Se5 性質(zhì)分類 Electrical properties 拓?fù)浣^緣體，熱電材料，紅外材料 Topological Insulators 禁帶寬度 Bangap 0.428 eV 合成方法 Synthetic method CVT 剝離難易程度 Degree of difficulty for exfoliation 易 Easy |
| 質(zhì)量標(biāo)準(zhǔn)： | 參考文獻(xiàn) 1，Silkin, I. V., et al. "Three-and two-dimensional topological insulators in Pb 2 Sb 2 Te 5, Pb 2 Bi 2 Te 5, and Pb 2 Bi 2 Se 5 layered compounds." JETP letters 94.3 (2011): 217. 2，Zemskov, V. S., et al. "Thermoelectric materials with low heat conductivity based on PbSe-Bi 2 Se 3 compounds." Inorganic Materials: Applied Research 2.5 (2011): 405-413. 3，Neupane, Madhab, et al. "Topological surface states and Dirac point tuning in ternary topological insulators." Physical Review B 85.23 (2012): 235406. |
