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| 貨號(hào) | 品名 | 規(guī)格 | 包裝 | 單價(jià) | 貨期 | 庫(kù)存 |
| JD200528100541 | GeBi4Te7晶體 | 大于20平方毫米 | -- | 5120元 | 咨詢(xún)客服 | 3天 |
| JD200528100508 | GeBi4Te7晶體 | 大于10平方毫米 | -- | 3120元 | 咨詢(xún)客服 | 3天 |
| 性狀： | 材料名稱(chēng) Name GeBi4Te7 性質(zhì)分類(lèi) Electrical properties 拓?fù)浣^緣體,紅外材料，熱電材料，相變材料 Topological Insulators 禁帶寬度 Bangap 0.597 eV 合成方法 Synthetic method CVT 晶體結(jié)構(gòu) Crystal Structure trigonal 剝離難易程度 Degree of difficulty for exfoliation 易 Easy |
| 質(zhì)量標(biāo)準(zhǔn)： | 參考文獻(xiàn) 1，Kuznetsov, V. L., L. A. Kuznetsova, and D. M. Rowe. "Effect of nonstoichiometry on the thermoelectric properties of GeBi 4 Te 7." Journal of applied physics 85.6 (1999): 3207-3210. 2，Imai, Yoji, and Akio Watanabe. "Electronic structures of PbBi4Te7 and GeBi4Te7 calculated by a first-principle pseudopotential method." Intermetallics 11.5 (2003): 451-458. 3，Souchay, Daniel, et al. "Layered manganese bismuth tellurides with GeBi 4 Te 7-and GeBi 6 Te 10-type structures: towards multifunctional materials." Journal of Materials Chemistry C 7.32 (2019): 9939-9953. 4， Shelimova, L. E., and M. A. Kretova. "Phase transformations in Ge 3 Bi 2 Te 6, GeBi 2 Te 4 and GeBi 4 Te 7 semiconductor compounds." Izvestiya Akademii Nauk-Rossijskaya Akademiya Nauk. Neorganicheskie Materialy 29.1 (1993): 54-58. |
