4007787550
|
 |
||||||||||||||
| 貨號(hào) | 品名 | 規(guī)格 | 包裝 | 單價(jià) | 貨期 | 庫(kù)存 |
| JD200528100233 | GeBi2Te4晶體 | 大于20平方毫米 | 0元 | 咨詢(xún)客服 | 3天 | |
| JD200528100209 | GeBi2Te4晶體 | 大于10平方毫米 | -- | 3120元 | 咨詢(xún)客服 | 3天 |
| 性狀： | 材料名稱(chēng) Name GeBi2Te4 性質(zhì)分類(lèi) Electrical properties 拓?fù)浣^緣體，紅外材料 Topological Insulators 禁帶寬度 Bangap 0.837 eV 合成方法 Synthetic method CVT 晶體結(jié)構(gòu) Crystal Structure trigonal 剝離難易程度 Degree of difficulty for exfoliation 易 Easy |
| 質(zhì)量標(biāo)準(zhǔn)： | 參考文獻(xiàn) Shamoto, Shin-ichi, et al. "Structural study on optical recording materials Ge2Sb2+ xTe5 and GeBi2Te4." Physica B: Condensed Matter 385 (2006): 574-577. Tichy, L., M. Frumar, and J. Klikorka. "Some electrical properties of GeBi2Te4 single crystals." physica status solidi (a) 56.1 (1979): 323-326. Sterzi, A., et al. "Probing band parity inversion in the topological insulator GeBi2Te4 by linear dichroism in ARPES." Journal of Electron Spectroscopy and Related Phenomena 225 (2018): 23-27. Collaboration: Authors and editors of the volumes III/17H-17I-41E. "PbSb2S4, GeSb2Te4, GeBi2Te4, SnBi2Te4 crystal structure, physical properties." Ternary Compounds, Organic Semiconductors (2000): 1-5. Iwaya, Katsuya, et al. "STM Studies of ternary topological insulators GeBi2Te4 and SnBi2Te4." APS Meeting Abstracts. 2014. Marcinkova, A., et al. "Topological metal behavior in GeBi 2 Te 4 single crystals." Physical Review B 88.16 (2013): 165128. |
