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貨號(hào) | 品名 | 規(guī)格 | 包裝 | 單價(jià) | 貨期 | 庫(kù)存 |
JD200528094918 | CuInP2Se6晶體 | 大于20平方毫米 | -- | 0元 | 咨詢客服 | 3天 |
JD200528094853 | CuInP2Se6晶體 | 大于10平方毫米 | -- | 3120元 | 咨詢客服 | 3天 |
性狀: | 材料名稱 Name
性質(zhì)分類 Electrical properties
Bangap 0.311 eV 合成方法 Synthetic method CVT 剝離難易程度 Degree of difficulty for exfoliation
Easy Notice Stable |
質(zhì)量標(biāo)準(zhǔn): | 參考文獻(xiàn): 1, Vysochanskii, Yu M., et al. "Dielectric measurement study of lamellar CuInP2Se6: successive transitions towards a ferroelectric state via an incommensurate phase?." Solid state communications 115.1 (2000): 13-17. 2,Banys, J., et al. "Dielectric properties of ferroelectrics CuInP2Se6 and CuCrP2S6." Ferroelectrics 257.1 (2001): 163-168. 3, Liubachko, V., et al. "Anisotropic thermal properties and ferroelectric phase transitions in layered CuInP2S6 and CuInP2Se6 crystals." Journal of Physics and Chemistry of Solids 111 (2017): 324-327. |